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TECHNICAL DOCUMENTATION
 

  High current and high voltage LISKY®

LISION’s LISKY® with higher current density characteristics.
Lower forward voltage drop benefit.
10A~20A, 100V~200V LISKY® for power application.

 

Schottky with Planar Structure

LISKY® Structure

 

  Ultra-Low Output LDO

Using P-MOS process for Ultra-low output LDO.
400mA Vout < 1V

 

  Hall IC

CMOS High Sensitivity μPower Hall Switch

 

  Customize MOSFET

LS10Nxx Series
LS1820N Series
LS3019N Series
LS3407P Series
LS5715N Series

 

  IGBT

25A / 1200V TO-3P IGBT

 

  Application Specific Multi-chip Device

- Multi-Chip Device (TVS + Rectifier) for Power Application Field
  TVS: 200W / 200V
  Fast Recovery Rectifier: 1A / 600V / 500nS
- Multi-Chip Device (TVS + PTC) for LNB
  TVS: 400W / 5.6V
  PTC: 1.3A / 60V
- Multi-Chip Device (Switching + TVS) for Communication
  Switching: 100mA / 80V
  TVS: 500W @ 8/20uS / 3V

 

  Application Specific Integrated Circuit (ASIC)

- ASIC for NB
- ASIC for Communication
- ASIC for Power Application Field

 
 
 
 
Lision Technology Inc.

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